bc856w ... bc859w bc856w ... bc859w pnp surface mount general purpose si-epi-planar transistors si-epi-planar universaltransistoren fr die oberfl?chenmontage pnp version 2011-07-11 dimensions - ma?e [mm] 1 = b 2 = e 3 = c power dissipation C verlustleistung 200 mw plastic case kunststoffgeh?use sot-323 weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) bc856w bc857w bc858w bc859w collector-emitter-volt. C kollektor-emitter-spannung b open - v ceo 65 v 45 v 30 v collector-base-voltage C kollektor-basis-spannung e open - v cbo 80 v 50 v 30 v emitter-base-voltage C emitter-basis-spannung c open - v ebo 5 v power dissipation C verlustleistung p tot 200 mw 1 ) collector current C kollektorstrom (dc) - i c 100 ma peak collector current C kollektor-spitzenstrom - i cm 200 ma peak base current C basis-spitzenstrom - i bm 200 ma peak emitter current C emitter-spitzenstrom i em 200 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain C kollektor-basis-stromverh?ltnis - v ce = 5 v, - i c = 10 a group a group b group c h fe h fe h fe C C C 140 250 480 C C C - v ce = 5 v, - i c = 2 ma group a group b group c h fe h fe h fe 125 220 420 180 290 520 250 475 800 collector-emitter saturation voltage C kollektor-s?ttigungsspannung 2 ) - i c = 10 ma, - i b = 0.5 ma - i c = 100 ma, - i b = 5 ma - v cesat - v cesat C C 75 mv 250 mv 300 mv 650 mv 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 1.3 0.3 1 . 2 5 0 . 1 1 0.1 2 0.1 2 . 1 0 . 1 type code 3 2 1
bc856w ... bc859w characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. base-emitter saturation voltage C basis-s?ttigungsspannung 2 ) - i c = 10 ma, - i b = 0.5 ma - i c = 100 ma, - i b = 5 ma - v besat - v besat C C 700 mv 850 mv C C base-emitter-voltage C basis-emitter-spannung 2 ) - v ce = 5 v, - i c = 2 ma - v ce = 5 v, - i c = 10 ma - v be - v be 600 mv C 650 mv C 750 mv 820 mv collector-base cutoff current C kollektor-basis-reststrom - v cb = 30 v, (e open) - v ce = 30 v, t j = 125c, (e open) - i cbo - i cbo C C C C 15 na 5 a emitter-base cutoff current - v eb = 5 v, (c open) - i ebo C C 100 na gain-bandwidth product C transitfrequenz - v ce = 5 v, - i c = 10 ma, f = 100 mhz f t 100 mhz C C collector-base capacitance C kollektor-basis-kapazit?t - v cb = 10 v, i e =i e = 0, f = 1 mhz c cbo C C 4.5 pf emitter-base capacitance C emitter-basis-kapazit?t - v eb = 0.5 v, i c = i c = 0, f = 1 mhz c ebo C 10 pf 15 pf noise figure C rauschzahl - v ce = 5 v, - i c = 200 a, r g = 2 k f = 1 khz, f = 200 hz bc856w ... bc858w bc859w f f C C C 1 db 10 db 4 db thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 620 k/w 1 ) recommended complementary npn transistors empfohlene komplement?re npn-transistoren bc846w ... bc849w marking of available current gain groups per type stempelung der lieferbare stromverst?rkungs- gruppen pro typ bc856aw = 3a bc857aw = 3e bc858aw = 3j bc856bw = 3b bc857bw = 3f bc858bw = 3k BC859BW = 4b bc857cw = 3g bc858cw = 3l bc859cw = 4c 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag
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